Factory Lead Time  

12 Weeks

Package / Case  

TO-261-4, TO-261AA

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

4

Transistor Element Material  

SILICON

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

1A Tc

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Power Dissipation (Max)  

3.3W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

ECCN Code  

EAR99

Resistance  

1.5Ohm

Terminal Finish  

Matte Tin (Sn)

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STN4N

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3.3W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.5 Ω @ 500mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

150pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

0.9nC @ 10V

Rise Time  

2ns

Vgs (Max)  

±20V

Fall Time (Typ)  

10.4 ns

Continuous Drain Current (ID)  

1A

Threshold Voltage  

2V

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

1A

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

4A

Max Junction Temperature (Tj)  

150°C

Height  

1.9mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free