Factory Lead Time  

20 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Power Dissipation (Max)  

110W Tc

Turn Off Delay Time  

100 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Cut Tape (CT)

Series  

DeepGATE™, STripFET™ VI

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

3MOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Additional Feature  

ULTRA-LOW RESISTANCE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB155N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Case Connection  

DRAIN

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

80nC @ 5V

Rise Time  

85ns

Vgs (Max)  

±20V

Fall Time (Typ)  

40 ns

Continuous Drain Current (ID)  

80A

Threshold Voltage  

1V

JEDEC-95 Code  

TO-252

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

30V

Avalanche Energy Rating (Eas)  

525 mJ

Height  

4.6mm

Length  

10.75mm

Width  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free