Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

30 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

90W Tc

Current - Continuous Drain (Id) @ 25℃  

12A Tc

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ V

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Additional Feature  

ULTRA-LOW RESISTANCE

Peak Reflow Temperature (Cel)  

260

Base Part Number  

STU16N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

Turn On Delay Time  

25 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

299m Ω @ 6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1250pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

45nC @ 10V

Rise Time  

9ns

Vgs (Max)  

±25V

Fall Time (Typ)  

7 ns

Continuous Drain Current (ID)  

12A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.279Ohm

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

48A

Avalanche Energy Rating (Eas)  

200 mJ

Width  

2.4mm

Height  

6.2mm

Length  

6.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant