Factory Lead Time  

16 Weeks

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

19.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

90 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Power Dissipation (Max)  

35W Tc

Number of Elements  

1

Series  

FDmesh™ II

Packaging  

Tube

Operating Temperature  

150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Base Part Number  

STF23

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Case Connection  

ISOLATED

Turn On Delay Time  

21 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

180m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2050pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

70nC @ 10V

Rise Time  

45ns

Vgs (Max)  

±25V

Fall Time (Typ)  

40 ns

Continuous Drain Current (ID)  

19.5A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

78A

Avalanche Energy Rating (Eas)  

700 mJ

Width  

4.6mm

Length  

10.4mm

Height  

16.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant