Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

5.2A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

125W Tc

Turn Off Delay Time  

45 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Base Part Number  

STB7N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

125W

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.8 Ω @ 2.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1138pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

56nC @ 10V

Rise Time  

12ns

Vgs (Max)  

±30V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

5.2A

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

20.8A

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant