Factory Lead Time  

20 Weeks

Package / Case  

8-PowerVDFN

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

8

Transistor Element Material  

SILICON

Turn Off Delay Time  

107.5 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1V @ 250μA

Power Dissipation (Max)  

136W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Current - Continuous Drain (Id) @ 25℃  

160A Tc

Series  

DeepGATE™, STripFET™ VI

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~175°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

5

ECCN Code  

EAR99

Resistance  

1.3MOhm

Additional Feature  

ULTRA-LOW RESISTANCE

Terminal Position  

DUAL

Base Part Number  

STL160

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

80W

Case Connection  

DRAIN

Turn On Delay Time  

18.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.3m Ω @ 17.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

6375pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

61.5nC @ 4.5V

Rise Time  

32ns

Vgs (Max)  

±20V

Fall Time (Typ)  

54 ns

Continuous Drain Current (ID)  

160A

Threshold Voltage  

1V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

30V

Avalanche Energy Rating (Eas)  

900 mJ

Height  

880μm

Width  

5.75mm

Length  

4.75mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free