Factory Lead Time  

26 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

60W Tc

Turn Off Delay Time  

19.3 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ II Plus

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STU7N

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

60W

Case Connection  

DRAIN

Turn On Delay Time  

7.6 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

950m Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

271pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

8.8nC @ 10V

Rise Time  

7.2ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

15.9 ns

Continuous Drain Current (ID)  

5A

Gate to Source Voltage (Vgs)  

25V

Drain Current-Max (Abs) (ID)  

5A

Drain-source On Resistance-Max  

0.95Ohm

Pulsed Drain Current-Max (IDM)  

20A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

99 mJ

Height  

6.2mm

Length  

6.6mm

Width  

2.4mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant