Factory Lead Time  

26 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

11A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

90W Tc

Turn Off Delay Time  

30 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STU13N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

Case Connection  

DRAIN

Turn On Delay Time  

3 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

360m Ω @ 5.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

790pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

27nC @ 10V

Rise Time  

8ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

11A

Gate to Source Voltage (Vgs)  

25V

Pulsed Drain Current-Max (IDM)  

44A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

200 mJ

Height  

6.9mm

Length  

6.6mm

Width  

2.4mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant