Factory Lead Time  

26 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

10A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

70W Tc

Turn Off Delay Time  

32 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STU10N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

70W

Turn On Delay Time  

10 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

550m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

540pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

19nC @ 10V

Rise Time  

12ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

15 ns

Continuous Drain Current (ID)  

10A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

25V

Drain Current-Max (Abs) (ID)  

8A

Drain-source On Resistance-Max  

0.55Ohm

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

200 mJ

Height  

6.9mm

Length  

6.6mm

Width  

2.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant