Factory Lead Time  

17 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

110W Tc

Turn Off Delay Time  

32 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH5™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

950mOhm

Terminal Finish  

Tin (Sn)

Base Part Number  

STP8N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Case Connection  

DRAIN

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

950m Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

450pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

16.5nC @ 10V

Rise Time  

14ns

Vgs (Max)  

±30V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

6A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

6A

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

24A

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free