Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

8.4A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

125W Tc

Turn Off Delay Time  

41 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH3™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

680mOhm

Terminal Finish  

Matte Tin (Sn)

Terminal Position  

SINGLE

Base Part Number  

STP10

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

125W

Turn On Delay Time  

14.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

750m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1250pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

42nC @ 10V

Rise Time  

15ns

Drain to Source Voltage (Vdss)  

620V

Vgs (Max)  

±30V

Fall Time (Typ)  

31 ns

Continuous Drain Current (ID)  

8.4A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

650V

Avalanche Energy Rating (Eas)  

220 mJ

Nominal Vgs  

3.75 V

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free