Factory Lead Time  

17 Weeks

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Turn Off Delay Time  

32 ns

Power Dissipation (Max)  

110W Tc

Number of Elements  

1

Series  

SuperMESH5™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STU8N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Case Connection  

DRAIN

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

950m Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

450pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

16.5nC @ 10V

Rise Time  

14ns

Vgs (Max)  

±30V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

6A

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

6A

Drain-source On Resistance-Max  

0.95Ohm

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

24A

Width  

2.4mm

Length  

6.6mm

Height  

6.2mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free