Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

25W Tc

Turn Off Delay Time  

32 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

FDmesh™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

550MOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Base Part Number  

STF10N

Pin Count  

3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

25W

Case Connection  

ISOLATED

Turn On Delay Time  

9.2 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

550m Ω @ 4A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

540pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

19nC @ 10V

Rise Time  

10ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

9.8 ns

Continuous Drain Current (ID)  

8A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain Current-Max (Abs) (ID)  

8A

Drain to Source Breakdown Voltage  

650V

Height  

16.4mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free