Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

2.7A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

45W Tc

Turn Off Delay Time  

22 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

SuperMESH3™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

2.5Ohm

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP3N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

45W

Turn On Delay Time  

9 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.5 Ω @ 1.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

385pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

13nC @ 10V

Rise Time  

6.8ns

Vgs (Max)  

±30V

Fall Time (Typ)  

15.6 ns

Continuous Drain Current (ID)  

2.7A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

620V

Pulsed Drain Current-Max (IDM)  

10.8A

Avalanche Energy Rating (Eas)  

100 mJ

Nominal Vgs  

3.75 V

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free