Factory Lead Time  

8 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

59W Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Turn Off Delay Time  

65 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2003

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.55Ohm

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

800V

Current Rating  

8A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

59W

Case Connection  

ISOLATED

Turn On Delay Time  

40 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.55 Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2050pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

45nC @ 10V

Rise Time  

110ns

Vgs (Max)  

±30V

Fall Time (Typ)  

70 ns

Continuous Drain Current (ID)  

8A

Threshold Voltage  

5V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

8A

Drain to Source Breakdown Voltage  

800V

Avalanche Energy Rating (Eas)  

850 mJ

Height  

9.19mm

Length  

10.16mm

Width  

4.7mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free