Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3 Full Pack

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

30W Tc

Turn Off Delay Time  

48 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Current - Continuous Drain (Id) @ 25℃  

6.2A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Packaging  

Tube

Series  

SuperMESH™

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.5Ohm

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP8N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

30W

Case Connection  

ISOLATED

Turn On Delay Time  

17 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.5 Ω @ 3.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1320pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

46nC @ 10V

Rise Time  

30ns

Vgs (Max)  

±30V

Fall Time (Typ)  

28 ns

Continuous Drain Current (ID)  

6.2A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

24.8A

Width  

4.6mm

Height  

16.4mm

Length  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free