Factory Lead Time  

38 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Number of Elements  

1

Power Dissipation (Max)  

300W Tc

Turn Off Delay Time  

70 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

Not Applicable

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

8mOhm

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOGIC LEVEL COMPATIBLE

Base Part Number  

STP85N

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

35 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8m Ω @ 40A, 10V

Vgs(th) (Max) @ Id  

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

4050pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 5V

Rise Time  

165ns

Vgs (Max)  

±15V

Fall Time (Typ)  

55 ns

Continuous Drain Current (ID)  

80A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

15V

Drain to Source Breakdown Voltage  

55V

Pulsed Drain Current-Max (IDM)  

320A

Avalanche Energy Rating (Eas)  

980 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free