Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

50A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

30W Tc

Turn Off Delay Time  

36 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Series  

STripFET™ II

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

18mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Voltage - Rated DC  

60V

Current Rating  

50A

Base Part Number  

STP55N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

30W

Case Connection  

ISOLATED

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

18m Ω @ 27.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

60nC @ 10V

Rise Time  

50ns

Vgs (Max)  

±20V

Fall Time (Typ)  

15 ns

Continuous Drain Current (ID)  

50A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

200A

Dual Supply Voltage  

60V

Nominal Vgs  

3 V

Height  

9.3mm

Width  

4.6mm

Length  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free