Factory Lead Time  

17 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 (TO-226AA)

Number of Pins  

3

Weight  

453.59237mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

500mA Tj

Drive Voltage (Max Rds On, Min Rds On)  

2V 5V

Number of Elements  

1

Power Dissipation (Max)  

1W Tc

Turn Off Delay Time  

30 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1V @ 1mA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Bulk

Published  

2013

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOW THRESHOLD

Terminal Position  

BOTTOM

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

1W

Turn On Delay Time  

20 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.5 Ω @ 300mA, 5V

Input Capacitance (Ciss) (Max) @ Vds  

250pF @ 15V

Rise Time  

20ns

Drain to Source Voltage (Vdss)  

16.5V

Vgs (Max)  

±10V

Fall Time (Typ)  

30 ns

Continuous Drain Current (ID)  

500mA

Gate to Source Voltage (Vgs)  

10V

Drain Current-Max (Abs) (ID)  

0.5A

Drain to Source Breakdown Voltage  

-16.5V

Feedback Cap-Max (Crss)  

60 pF

Height  

5.33mm

Length  

5.21mm

Width  

4.19mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant