Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

190W Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

22A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

110 ns

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STW32N

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

130m Ω @ 11A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1973pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

62.5nC @ 10V

Rise Time  

9.5ns

Vgs (Max)  

±25V

Fall Time (Typ)  

23.6 ns

Continuous Drain Current (ID)  

22A

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

88A

Avalanche Energy Rating (Eas)  

340 mJ

RoHS Status  

ROHS3 Compliant

REACH SVHC  

not_compliant

Lead Free  

Lead Free