Factory Lead Time  

22 Weeks

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Power Dissipation (Max)  

125W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

100A Tc

Series  

STripFET™ F7

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP100

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5.6m Ω @ 50A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1980pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Drain to Source Voltage (Vdss)  

60V

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

100A

JEDEC-95 Code  

TO-220AB

Drain-source On Resistance-Max  

0.0056Ohm

Pulsed Drain Current-Max (IDM)  

400A

DS Breakdown Voltage-Min  

60V

Avalanche Energy Rating (Eas)  

200 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free