Lifecycle Status  

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time  

20 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

10A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

30W Tc

Turn Off Delay Time  

16.5 ns

Operating Temperature  

175°C TJ

Packaging  

Tube

Series  

DeepGATE™, STripFET™ VI

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STP10

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Case Connection  

DRAIN

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

160m Ω @ 5A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

340pF @ 48V

Gate Charge (Qg) (Max) @ Vgs  

6.4nC @ 10V

Rise Time  

7ns

Vgs (Max)  

±20V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

10A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

40A

Avalanche Energy Rating (Eas)  

80 mJ

RoHS Status  

ROHS3 Compliant