Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Power Dissipation (Max)  

300W Tc

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

140 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Packaging  

Tape & Reel (TR)

Series  

STripFET™ II

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

6mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Voltage - Rated DC  

55V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

120A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB150N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

35 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

190nC @ 10V

Rise Time  

180ns

Vgs (Max)  

±20V

Fall Time (Typ)  

80 ns

Continuous Drain Current (ID)  

60A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

55V

Pulsed Drain Current-Max (IDM)  

480A

Dual Supply Voltage  

55V

Avalanche Energy Rating (Eas)  

850 mJ

Nominal Vgs  

4 V

Height  

6.35mm

Length  

6.35mm

Width  

6.35mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free