Factory Lead Time  

12 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Contact Plating  

Tin

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

43 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Power Dissipation (Max)  

110W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

60A Tc

Series  

STripFET™ II

Packaging  

Tape & Reel (TR)

Operating Temperature  

-65°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

16mOhm

Voltage - Rated DC  

60V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

60A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB60N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Turn On Delay Time  

16 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

16m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1810pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

66nC @ 10V

Rise Time  

108ns

Vgs (Max)  

±20V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

60A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

240A

Dual Supply Voltage  

60V

Nominal Vgs  

3 V

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free