Factory Lead Time  

26 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Contact Plating  

Tin

Weight  

3.949996g

Transistor Element Material  

SILICON

Turn Off Delay Time  

96 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Power Dissipation (Max)  

250W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

34A Tc

Series  

MDmesh™ II Plus

Packaging  

Cut Tape (CT)

Operating Temperature  

-55°C~150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STB40N

JESD-30 Code  

R-PSSO-G2

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

Turn On Delay Time  

20.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

88m Ω @ 17A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2500pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

57nC @ 10V

Rise Time  

13.5ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

11 ns

Continuous Drain Current (ID)  

34A

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.088Ohm

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

500 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free