Factory Lead Time  

26 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

250W Tc

Turn Off Delay Time  

52 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Current - Continuous Drain (Id) @ 25℃  

18.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~150°C TJ

Packaging  

Cut Tape (CT)

Series  

SuperMESH5™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

299MOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB21N

JESD-30 Code  

R-PSSO-G2

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

250W

Case Connection  

DRAIN

Turn On Delay Time  

17 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

299m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1645pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

43nC @ 10V

Rise Time  

27ns

Vgs (Max)  

±30V

Fall Time (Typ)  

40 ns

Continuous Drain Current (ID)  

18.5A

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

900V

Pulsed Drain Current-Max (IDM)  

74A

Avalanche Energy Rating (Eas)  

200 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free