Factory Lead Time  

17 Weeks

Contact Plating  

Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

17A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

125W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Cut Tape (CT)

Series  

MDmesh™ V

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

150Ohm

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB21N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

125W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

190m Ω @ 8.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1950pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

50nC @ 10V

Rise Time  

10ns

Vgs (Max)  

±25V

Fall Time (Typ)  

12 ns

Continuous Drain Current (ID)  

17A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

68A

Avalanche Energy Rating (Eas)  

400 mJ

Nominal Vgs  

4 V

Height  

4.6mm

Length  

10.75mm

Width  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free