Factory Lead Time  

20 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-261-4, TO-261AA

Number of Pins  

4

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

14 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Power Dissipation (Max)  

2.6W Tc

Series  

DeepGATE™, STripFET™ VI

Operating Temperature  

-55°C~175°C TJ

Packaging  

Cut Tape (CT)

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

ECCN Code  

EAR99

Resistance  

130MOhm

Terminal Finish  

Matte Tin (Sn)

Terminal Position  

DUAL

Terminal Form  

GULL WING

Base Part Number  

STN3P

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.6W

Case Connection  

DRAIN

Turn On Delay Time  

6.4 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

160m Ω @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

340pF @ 48V

Gate Charge (Qg) (Max) @ Vgs  

6.4nC @ 10V

Rise Time  

5.3ns

Drain to Source Voltage (Vdss)  

60V

Vgs (Max)  

±20V

Fall Time (Typ)  

3.7 ns

Continuous Drain Current (ID)  

-3A

Threshold Voltage  

-4V

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

3A

Drain to Source Breakdown Voltage  

-60V

Max Junction Temperature (Tj)  

175°C

Height  

1.9mm

Length  

6.7mm

Width  

3.7mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free