Factory Lead Time  

16 Weeks

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

24A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

72.5 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Power Dissipation (Max)  

34W Tc

Series  

MDmesh™ M2

Operating Temperature  

150°C TJ

Packaging  

Tube

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STF33N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

Turn On Delay Time  

13.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

140m Ω @ 12A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1790pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

41.5nC @ 10V

Drain to Source Voltage (Vdss)  

650V

Vgs (Max)  

±25V

Continuous Drain Current (ID)  

24A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.14Ohm

Pulsed Drain Current-Max (IDM)  

96A

DS Breakdown Voltage-Min  

650V

Avalanche Energy Rating (Eas)  

780 mJ

Width  

4.6mm

Height  

16.4mm

Length  

10.4mm

RoHS Status  

ROHS3 Compliant