Mount  

Through Hole

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Contact Plating  

Tin

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

75 ns

Power Dissipation (Max)  

300W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Series  

STripFET™ III

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

3.7mOhm

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

30V

Current Rating  

120A

Base Part Number  

STP200

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

30 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.6m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4950pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

140nC @ 10V

Rise Time  

195ns

Vgs (Max)  

±20V

Fall Time (Typ)  

60 ns

Continuous Drain Current (ID)  

60A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

30V

Pulsed Drain Current-Max (IDM)  

480A

Width  

4.6mm

Length  

10.4mm

Height  

9.15mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free