Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

300W Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Turn Off Delay Time  

110 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Operating Temperature  

175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

4.5MOhm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

30V

Current Rating  

80A

Base Part Number  

STP80N

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

30 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.5m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 4.5V

Rise Time  

270ns

Vgs (Max)  

±20V

Fall Time (Typ)  

95 ns

Continuous Drain Current (ID)  

80A

Threshold Voltage  

1.5V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

30V

Max Junction Temperature (Tj)  

175°C

Height  

19.68mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free