Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Power Dissipation (Max)  

160W Tc

Turn Off Delay Time  

55 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Packaging  

Tube

Series  

SuperMESH™

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.3Ohm

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

900V

Current Rating  

8A

Base Part Number  

STP9N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

160W

Turn On Delay Time  

22 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.3 Ω @ 3.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2115pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

72nC @ 10V

Rise Time  

13ns

Vgs (Max)  

±30V

Fall Time (Typ)  

28 ns

Continuous Drain Current (ID)  

8A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

8A

Drain to Source Breakdown Voltage  

900V

Avalanche Energy Rating (Eas)  

220 mJ

Width  

4.6mm

Height  

15.75mm

Length  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free