Mount  

Surface Mount, Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

60W Tc

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

20 ns

Current - Continuous Drain (Id) @ 25℃  

20A Tc

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

70mOhm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

60V

Current Rating  

20A

Base Part Number  

STP20N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

60W

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

70m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

7.5nC @ 10V

Rise Time  

30ns

Vgs (Max)  

±18V

Fall Time (Typ)  

6 ns

Continuous Drain Current (ID)  

10A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

18V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

80A

Height  

9.15mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free