Lifecycle Status  

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Weight  

329.988449mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

34A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

250W Tc

Turn Off Delay Time  

96 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ II Plus

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STP40N

JESD-30 Code  

R-PSFM-T3

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

250W

Case Connection  

DRAIN

Turn On Delay Time  

20.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

88m Ω @ 17A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

2500pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

57nC @ 10V

Rise Time  

13.5ns

Vgs (Max)  

±25V

Fall Time (Typ)  

11 ns

Continuous Drain Current (ID)  

34A

Threshold Voltage  

2V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.088Ohm

Drain to Source Breakdown Voltage  

600V

Avalanche Energy Rating (Eas)  

500 mJ

Max Junction Temperature (Tj)  

150°C

Height  

19.68mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free