Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

17A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

125W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

73 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

190MOhm

Terminal Finish  

Tin (Sn)

Base Part Number  

STP24N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

120W

Case Connection  

DRAIN

Turn On Delay Time  

11.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

190m Ω @ 8A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1400pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

46nC @ 10V

Rise Time  

16.5ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±30V

Fall Time (Typ)  

37 ns

Continuous Drain Current (ID)  

17A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

68A

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free