Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

330W Tc

Turn Off Delay Time  

100 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

4MOhm

Terminal Finish  

Tin (Sn)

Base Part Number  

STP160

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

330W

Turn On Delay Time  

22 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

6750pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

85nC @ 10V

Rise Time  

65ns

Vgs (Max)  

±20V

Fall Time (Typ)  

15 ns

Continuous Drain Current (ID)  

120A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

75V

Pulsed Drain Current-Max (IDM)  

480A

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free