Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

329.988449mg

Transistor Element Material  

SILICON

Turn Off Delay Time  

92 ns

Power Dissipation (Max)  

35W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

23A Tc

Series  

FDmesh™ II

Packaging  

Tube

Operating Temperature  

150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STF28

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

Turn On Delay Time  

23.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

150m Ω @ 11.5A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

2090pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

62.5nC @ 10V

Rise Time  

21.5ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

27 ns

Continuous Drain Current (ID)  

23A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

92A

Avalanche Energy Rating (Eas)  

50 mJ

Width  

4.6mm

Length  

10.4mm

Height  

16.4mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No