Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

24A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

150W Tc

Turn Off Delay Time  

53 ns

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ V

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

119MOhm

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE ENERGY RATED

Base Part Number  

STP32N

Pin Count  

3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150W

Turn On Delay Time  

53 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

119m Ω @ 12A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

3320pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

72nC @ 10V

Rise Time  

12ns

Vgs (Max)  

±25V

Fall Time (Typ)  

16 ns

Continuous Drain Current (ID)  

24A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

96A

Avalanche Energy Rating (Eas)  

650 mJ

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free