Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Full Pack, I2Pak

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

28A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

190W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ V

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Position  

SINGLE

Base Part Number  

STI34N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

110m Ω @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2700pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

62.5nC @ 10V

Rise Time  

8.7ns

Vgs (Max)  

±25V

Fall Time (Typ)  

7.5 ns

Continuous Drain Current (ID)  

28A

JEDEC-95 Code  

TO-262AA

Drain-source On Resistance-Max  

0.11Ohm

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

112A

Avalanche Energy Rating (Eas)  

510 mJ

RoHS Status  

ROHS3 Compliant