Lifecycle Status  

NRND (Last Updated: 8 months ago)

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

22A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

110 ns

Power Dissipation (Max)  

35W Tc

Number of Elements  

1

Series  

MDmesh™ II

Packaging  

Tube

Operating Temperature  

150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Base Part Number  

STF32N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Case Connection  

ISOLATED

Turn On Delay Time  

21.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

130m Ω @ 11A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

1973pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

62.5nC @ 10V

Rise Time  

9.5ns

Vgs (Max)  

±25V

Fall Time (Typ)  

23.6 ns

Continuous Drain Current (ID)  

22A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

88A

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free