Mounting Type  

Through Hole

Package / Case  

TO-262-3 Full Pack, I2Pak

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

35W Tc

Turn Off Delay Time  

61 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

13A Tc

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

Not Applicable

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Position  

SINGLE

Base Part Number  

STFI13N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Case Connection  

ISOLATED

Turn On Delay Time  

22 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

550m Ω @ 4.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2030pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

92nC @ 10V

Rise Time  

14ns

Vgs (Max)  

±30V

Fall Time (Typ)  

21 ns

Continuous Drain Current (ID)  

13A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.55Ohm

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

52A

Avalanche Energy Rating (Eas)  

400 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant