Factory Lead Time  

12 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

2.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

140W Tc

Turn Off Delay Time  

45 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

PowerMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STW3N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

140W

Turn On Delay Time  

24 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

9 Ω @ 1.3A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

939pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

29.3nC @ 10V

Rise Time  

47ns

Drain to Source Voltage (Vdss)  

1500V

Vgs (Max)  

±30V

Fall Time (Typ)  

61 ns

Continuous Drain Current (ID)  

1.3A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

2.5A

Drain-source On Resistance-Max  

9Ohm

Drain to Source Breakdown Voltage  

1.5kV

Avalanche Energy Rating (Eas)  

450 mJ

Height  

20.15mm

Length  

15.75mm

Width  

5.15mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free