Factory Lead Time  

12 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

35A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

115W Tc

Turn Off Delay Time  

45 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

45MOhm

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

100V

Current Rating  

35A

Base Part Number  

STP30N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

115W

Case Connection  

DRAIN

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

45m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1180pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

55nC @ 10V

Rise Time  

40ns

Vgs (Max)  

±20V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

35A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

100V

Avalanche Energy Rating (Eas)  

275 mJ

Height  

9.15mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free