Factory Lead Time  

12 Weeks

Package / Case  

TO-261-4, TO-261AA

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

4

Weight  

4.535924g

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

4A Tc

Power Dissipation (Max)  

3.3W Tc

Turn Off Delay Time  

17 ns

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~150°C TJ

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

ECCN Code  

EAR99

Resistance  

100mOhm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

60V

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

4A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STN3N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3.3W

Case Connection  

DRAIN

Turn On Delay Time  

7 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

100m Ω @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

315pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

13nC @ 10V

Rise Time  

18ns

Vgs (Max)  

±20V

Fall Time (Typ)  

6 ns

Continuous Drain Current (ID)  

4A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

4A

Drain to Source Breakdown Voltage  

16V

Width  

12.7mm

Length  

19.05mm

Height  

6.35mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free