Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

70W Tc

Turn Off Delay Time  

25 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

40A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Series  

STripFET™

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

NRND (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

22mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Additional Feature  

LOW THRESHOLD

Voltage - Rated DC  

30V

Current Rating  

40A

Base Part Number  

STP40N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

70W

Case Connection  

DRAIN

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

22m Ω @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

770pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

15nC @ 4.5V

Rise Time  

80ns

Vgs (Max)  

±16V

Fall Time (Typ)  

16 ns

Continuous Drain Current (ID)  

40A

Threshold Voltage  

1.7V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

30V

Pulsed Drain Current-Max (IDM)  

160A

Avalanche Energy Rating (Eas)  

250 mJ

Width  

4.6mm

Height  

9.15mm

Length  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free