Lifecycle Status  

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

20A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

140W Tc

Turn Off Delay Time  

85 ns

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

165MOhm

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP26N

Pin Count  

3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

140W

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

165m Ω @ 10A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

1800pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

60nC @ 10V

Rise Time  

25ns

Vgs (Max)  

±30V

Fall Time (Typ)  

50 ns

Continuous Drain Current (ID)  

10A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain Current-Max (Abs) (ID)  

20A

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

80A

Dual Supply Voltage  

600V

Nominal Vgs  

3 V

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free