Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

140W Tc

Current - Continuous Drain (Id) @ 25℃  

20A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

85 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

165MOhm

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP26N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

140W

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

165m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1800pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

60nC @ 10V

Rise Time  

25ns

Vgs (Max)  

±30V

Fall Time (Typ)  

50 ns

Continuous Drain Current (ID)  

10A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain Current-Max (Abs) (ID)  

20A

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

80A

Dual Supply Voltage  

600V

Nominal Vgs  

3 V

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free