Factory Lead Time  

12 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Contact Plating  

Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

3

Weight  

13.607771g

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

312W Tc

Current - Continuous Drain (Id) @ 25℃  

110A Tc

Turn Off Delay Time  

132 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

10.5mOhm

Voltage - Rated DC  

100V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

120A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB120N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

312W

Case Connection  

DRAIN

Turn On Delay Time  

25 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

10.5m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

233nC @ 10V

Rise Time  

90ns

Vgs (Max)  

±20V

Fall Time (Typ)  

68 ns

Continuous Drain Current (ID)  

110A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

100V

Pulsed Drain Current-Max (IDM)  

480A

Dual Supply Voltage  

100V

Avalanche Energy Rating (Eas)  

550 mJ

Nominal Vgs  

4 V

Width  

9.35mm

Height  

4.6mm

Length  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free