Factory Lead Time  

17 Weeks

Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Turn Off Delay Time  

29 ns

Power Dissipation (Max)  

110W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

16A Tc

Series  

MDmesh™ V

Packaging  

Tape & Reel (TR)

Operating Temperature  

150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

180mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Base Part Number  

STD18

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

192m Ω @ 8A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1260pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

31nC @ 10V

Rise Time  

9.5ns

Vgs (Max)  

±25V

Fall Time (Typ)  

13 ns

Continuous Drain Current (ID)  

13A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

25V

Drain Current-Max (Abs) (ID)  

9A

Drain to Source Breakdown Voltage  

550V

Pulsed Drain Current-Max (IDM)  

56A

Width  

6.2mm

Length  

6.6mm

Height  

2.4mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free