Contact Plating  

Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

25A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

100W Tc

Turn Off Delay Time  

58 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Cut Tape (CT)

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

35mOhm

Additional Feature  

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC  

100V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

25A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STD25N

JESD-30 Code  

R-PSSO-G2

Number of Channels  

1

Voltage  

100V

Element Configuration  

Single

Current  

17A

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

100W

Case Connection  

DRAIN

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

35m Ω @ 12.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1710pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

52nC @ 5V

Rise Time  

40ns

Vgs (Max)  

±16V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

25A

Threshold Voltage  

2.5V

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

100V

Avalanche Energy Rating (Eas)  

450 mJ

Max Junction Temperature (Tj)  

175°C

Nominal Vgs  

2.5 V

Height  

2.63mm

Length  

6.6mm

Width  

6.2mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free