Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Contact Plating  

Tin

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Turn Off Delay Time  

45 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Power Dissipation (Max)  

30W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

7.2A Tc

Series  

SuperMESH™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

850MOhm

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP9N

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

30W

Case Connection  

ISOLATED

Turn On Delay Time  

17 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

850m Ω @ 3.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

910pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

32nC @ 10V

Rise Time  

20ns

Vgs (Max)  

±30V

Fall Time (Typ)  

22 ns

Continuous Drain Current (ID)  

7.2A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

28.8A

Width  

4.6mm

Length  

10.4mm

Height  

9.3mm

RoHS Status  

ROHS3 Compliant

REACH SVHC  

No SVHC

Lead Free  

Lead Free